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Why is it That Differently Doped Regions in Semiconductors are Visible in Low Voltage SEM?
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SYSNO 0100007 Title Why is it That Differently Doped Regions in Semiconductors are Visible in Low Voltage SEM? Title Proč jsou různě dopované oblasti v polovodiči viditelné v nízko-napěťovém REM? Author(s) El Gomati, M. M. (GB)
Wells, T. C. R. (GB)
Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCID
Jayakody, H. (GB)Source Title IEEE Transactions on Electron Devices. Roč. 51, č. 2 (2004), s. 288-292 Document Type Článek v odborném periodiku Grant IAA1065304 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Language eng Country US Keywords doping of semiconductors * SEM imaging * inspection of patterns Permanent Link http://hdl.handle.net/11104/0007514
Number of the records: 1