Number of the records: 1
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
- 1.Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Mates, Tomáš - Kuldová, Karla - Melichar, Karel - Šimeček, Tomislav
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs.
Journal of Crystal Growth. Roč. 298, - (2007), s. 582-858. ISSN 0022-0248. E-ISSN 1873-5002
Impact factor: 1.950, year: 2007
http://hdl.handle.net/11104/0147727
Number of the records: 1