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Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE
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SYSNO 0026669 Title Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE Title Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)
Melichar, Karel (FZU-D)
Petříček, Otto (FZU-D) RID
Chráska, T. (CZ)
Holý, V. (CZ)
Vávra, I. (SK)
Ouattara, L. (SE)Source Title NANO ´04. s. 278-281. - Brno : Brno University of Technology, 2004 / Šandera P. Conference NANO ´04 International Conference, Brno, 13.10.2004-15.10.2004 Document Type Konferenční příspěvek (zahraniční konf.) Grant GP202/02/D069 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic GA202/03/0413 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic IAA1010318 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic CEZ AV0Z1010914 - FZU-D Language eng Country CZ Keywords semiconductor laser * quantum well * GaAs * InAs * XSTM * TEM * X-ray diffraction Permanent Link http://hdl.handle.net/11104/0116879
Number of the records: 1