Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

0521853 - FZÚ 2020 RIV BE eng A - Abstract
Remeš, Zdeněk - Stuchlíková, The-Ha - Mortet, Vincent - Ashcheulov, Petr - Taylor, Andrew - Stuchlík, Jiří
Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond.
Hasselt diamond workshop 2019 - SBDD XXIV. Hasselt: SBDD XXIV, 2019. s. 150-150.
[Hasselt diamond workshop 2019 - SBDD XXIV. 13.03.2019-15.03.2019, Hasselt]
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) LTC17029; GA ČR GC19-02858J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : amorphous hydrogenated silicon carbide * boron-doped diamond
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

We developed thin film diode structures based on thin film a-SiC:H prepared by plasma enhanced chemical vapor deposition at a relatively high temperature on transparent conductive boron-doped diamond (BDD) with an underlying Ti grid. The optical absorption of the BDD/Ti electrode is about 10% in a broad spectral range and the sheet resistivity about 100 /sq. The diodes have been characterized by photocurrent, photoluminescence, Raman and electroluminescence spectroscopy, as well as optical absorption spectroscopy in the visible, near infrared and mid infrared regions. Diodes show a relatively high optical transparency in the near infrared region, a dark current rectifying ratio of more than 4 orders at ±1.5 V, short photocurrent density 15 mA/cm2 and an energy conversion efficiency of 4%.
Permanent Link: http://hdl.handle.net/11104/0306407