Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO

0521781 - FZÚ 2020 RIV SK eng A - Abstract
Remeš, Zdeněk - Chang, Yu-Ying - Stuchlíková, The-Ha - Stuchlík, Jiří - Shu, H.H.
Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO.
Book of Abstracts of the 29th Joint Seminar of the Development of Materials Science in Research and Education (DMS – RE 2019). Bratislava: STU Bratislava, 2019 - (Behúlová, M.; Kožíšek, Z.; Papánková, B.). s. 41-41. ISBN 978-80-8208-019-6.
[29th Joint Seminar Development of Materials Science in Research and Education (DMS-RE2019). 02.09.2019-06.09.2019, Nová Lesná]
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : ZnO * a-SiC:H
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

Here we will study the optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO electrode using otical absorption spectroscopy PDS (photothermal deflection spectroscopy), Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence and electroluminescence spectroscopy. The infrared absorbance spectra confirm low carbon content x up to 0.1 in a-SixC1-x:H for SiH4/CH4 ratio 1:3. The increasing CH4 concentration in the H2/SiH4/CH4 flow rate decreases the growth rate of a-SixC1-x:H, increases x and lattice disorder and broadens the band gap to higher energy in agreement with previous publications

Permanent Link: http://hdl.handle.net/11104/0306347