Number of the records: 1
Design of InGaN/GaN MQW structure for scintillator applications
- 1.0496205 - FZÚ 2019 RIV PL eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hájek, František - Vaněk, Tomáš - Jarý, Vítězslav
Design of InGaN/GaN MQW structure for scintillator applications.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 256-256.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA ČR GA16-11769S
Institutional support: RVO:68378271
Keywords : InGaN/GaN * MQW structure * scintillator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Nitride semiconductor heterostructures are widely used for light emitting and laser diodes as well as for high power and high frequency applications. Recently, new application for InGaN/GaN multiple quantum well (MQW) heterostructures has emerged. It was shown that these heterostructures, if properly designed, can work as very efficient fast scintillators with long lifetime due to their radiation resistance. Although this application does not have such a massive market as LEDs, LDs or HEMTs, there is still very strong demand for fast scintillators and detectors of ionizing radiation due to the expansion of new diagnostic methods in medicine, electron microscopy and nuclear physics.
Permanent Link: http://hdl.handle.net/11104/0289031
Number of the records: 1