Electron affinity of B-doped nanocrystalline diamonds

0486997 - FZÚ 2018 RIV CZ eng A - Abstract
Romanyuk, Olexandr - Bartoš, Igor - Gordeev, Ivan - Artemenko, Anna - Jiříček, Petr - Marton, M. - Kromka, Alexander
Electron affinity of B-doped nanocrystalline diamonds.
Nanoworkshop 2017- Book of abstracts of the International Workshop on Polymer Metal Nanocomposites /8./. Praha, 2017. P6. ISBN 978-80-7378-347-1.
[Nanoworkshop 2017 - International Workshop on Polymer Metal Nanocomposites /8./. 12.09.2017-15.09.2017, Praha]
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271
Keywords : negative electron affinity * positive electron affinity * nanocrystalline diamond
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

Electron affinity in semiconductors is defined as an energy distance from the conduction band minimum (CBM) to the vacuum level. Usually, the vacuum level is above the CBM known as the positive electron affinity (PEA). In case of negative electron affinity (NEA), the CBM is above the vacuum level. Diamond electron affinity (DEA) can be tuned by its surface termination. Here, the dependence of DEA on a) boron doping and b) surface termination is studied by ultraviolet photoelectron spectroscopy (UPS). Boron doped nanocrystalline diamond films (B-NCD) were grown by double bias enhanced hot filament chemical vapor deposition on Si substrate using the gas mixture of trimethylborane and CH4 in H2. The H-termination was done by hydrogen microwave plasma treatment. It was found that, the electron affinity of B-NCD/H surfaces varies with the boron concentration.
Permanent Link: http://hdl.handle.net/11104/0281695