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Surface structure of MOVPE-prepared GaP(111)B
- 1.0471521 - FZÚ 2017 RIV DE eng A - Abstract
Kleinschmidt, P. - Mutombo, Pingo - Romanyuk, Olexandr - Himmerlich, M. - Berthold, T. - Wen, X. - Zhao, W. - Nägelein, A. - Steidl, M. - Paszuk, A. - Brückner, S. - Supplie, O. - Krischok, S. - Hannappel, T.
Surface structure of MOVPE-prepared GaP(111)B.
31th DGKK Workshop Epitaxy of III/V Semiconductors. Berlin: DGKK, 2016. s. 25-25.
[31th DGKK Workshop Epitaxy of III/V Semiconductors. 08.12.2016-09.12.2016, Duisburg]
Institutional support: RVO:68378271
Keywords : GaP(111) * surface reconstruction * MOVPE * STM
Subject RIV: BM - Solid Matter Physics ; Magnetism
Atomic structures of MOVPE prepared B-type GaP(111) surfaces have been investigated by STM and ab initio DFT calculations. STM measurements revealed an atomically flat surface with a locally ordered domains of (r3xr3), (2x2), and c(4x2) reconstructions. Theoretical calculations predicted stable (2x2) or c(4x2) structures under H-rich conditions.
Permanent Link: http://hdl.handle.net/11104/0268897
Number of the records: 1