III/V-on-Si interfaces: optical in situ control, surface science and DFT

0471513 - FZÚ 2017 RIV DE eng A - Abstract
Supplie, O. - Romanyuk, Olexandr - May, M.M. - Brückner, S. - Susi, T. - Paszuk, A. - Koppka, C. - Nägelein, A. - Steidl, M. - Zhao, W. - Dobrich, A. - Kleinschmidt, P. - Hannappel, T.
III/V-on-Si interfaces: optical in situ control, surface science and DFT.
31th DGKK Workshop Epitaxy of III/V Semiconductors. Berlin: DGKK, 2016. s. 14-14.
[31th DGKK Workshop Epitaxy of III/V Semiconductors. 08.12.2016-09.12.2016, Duisburg]
Institutional support: RVO:68378271
Keywords : GaP/Si * MOVPE * heterointerface
Subject RIV: BM - Solid Matter Physics ; Magnetism

Pseudomorphic virtual GaP/Si substrates are attractive for III/V-on-Si integration for microelectronics, photovoltaics, and water-splitting. The heterointerface is of particular interest since its atomic and electronic structure highly impacts crystal quality. Well-ordered interfaces are desirable but the formation of polar-on-nonpolar heterointerfaces is not yet fully understood. It is instructive to control each of the three steps (i) Si surface formation, (ii) III/V nucleation, and (iii) III/V layer growth individually in situ, which largely benefits from complementary surface science techniques as well as density functional theory (DFT). Here, we will highlight how such a combination enables specific metalorganic vapor phase (MOVPE) preparation of virtual substrates for both (100) and (111) orientation.

Permanent Link: http://hdl.handle.net/11104/0268895