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GaP-on-Si(100) heterointerfaces studied in situ
- 1.0471302 - FZÚ 2017 RIV DE eng A - Abstract
Supplie, O. - Brückner, S. - May, M.M. - Kleinschmidt, P. - Nägelein, A. - Paszuk, A. - Romanyuk, Olexandr - Grosse, F. - Hannappel, T.
GaP-on-Si(100) heterointerfaces studied in situ.
International Conference on Internal Interfaces (ICII-2016). Program and Abstracts. Marburg: Philipps Universität Marburg, 2016. s. 56.
[International Conference on Internal Interfaces (ICII-2016). 31.05.2016-03.06.2016, Marburg]
Institutional support: RVO:68378271
Keywords : GaP/Si * MOVPE * heterointerface
Subject RIV: BM - Solid Matter Physics ; Magnetism
We give an overview on how we combine optical in situ RAS during industrially scalable growth processes by MOVPE with electron-based in vacuo surface science analytics in order to study the GaP/Si(001) heterointerface formation and its atomic structure.
Permanent Link: http://hdl.handle.net/11104/0268691
Number of the records: 1