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GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE

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    0471296 - FZÚ 2017 RIV DE eng A - Abstract
    Supplie, O. - Brückner, S. - May, M.M. - Kleinschmidt, P. - Nägelein, A. - Paszuk, A. - Romanyuk, Olexandr - Grosse, F. - Hannappel, T.
    GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE.
    GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 40.
    [German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
    Institutional support: RVO:68378271
    Keywords : GaP/Si * MOVPE * heterointerface
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth conditions. The impact of As on Si surface as well as GaP nucleation on top of this surface were investigated.
    Permanent Link: http://hdl.handle.net/11104/0268689

     
     
Number of the records: 1  

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