Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

0464508 - FZÚ 2017 RIV DE eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Oswald, Jiří
Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 99.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
R&D Projects: GA ČR GA16-11769S; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : yellow band luminescence * GaN * InGaN * AlGaN * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism

Nitride semiconductors are the most studied materials nowadays because of their exceptional properties and possible applications. They can be used as light emitting diodes or transistors depending on the material used. A typical feature of the nitride luminescence spectra is a presence of defect interband levels luminescence band. For the luminescence and scintillating applications, it is desirable that the structure has quick response and the decay time is very short, in the order of few nanoseconds. This is the reason why the slow yellow luminescence band is undesirable. It has also high intensity, so it completely shadows the photolumi–nescence of other wavelengths.
In this work studies of two structures will be presented and discussed, mainly the photoluminescence spectra with yellow band luminescence, its origin and some possible solutions to avoid it. First one is the AlGaN/GaN heterostructure. There the connection between v-pits on layer interfaces and yellow luminescence band will be inferred. Second one is the InGaN/GaN heterostructure where the yellow luminescence band is changing its intensity, compared to the photoluminescence of GaN, with changing the excitation intensity, see Fig. 1. Possible explanation will be offered.

Permanent Link: http://hdl.handle.net/11104/0263391