Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

0464448 - FZÚ 2017 RIV CN eng A - Abstract
Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V. - Semenikhin, P.V. - Kalinina, K.V. - Parfeniev, R.V. - Berezovets, V.A. - Pangrác, Jiří - Hospodková, Alice - Hulicius, Eduard
Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells.
International Conference on Mid-IR-Optoelectronics: Materials and Devices /13./.MIOMD XIII. Shanghai: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2016 - (He, L.). s. 82-83
[International Conference on Mid-IR-Optoelectronics: Materials and Devices /13./.MIOMD XIII. 18.09.2016-22.09.2016, Beijing]
R&D Projects: GA ČR GA16-11769S; GA ČR(CZ) GP14-21285P; GA MŠMT LO1603; GA MŠMT(CZ) LM2011026
Grant - others:COST(XE) MP1204
Institutional support: RVO:68378271
Keywords : MOVPE * InAs * GaSb * composite quantum wells * EPR
Subject RIV: BM - Solid Matter Physics ; Magnetism

Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells (CQWs) based on the broken-gap heterojunctions are actively studied during two last decades as promising materials for spintronic and nanoelectronic applications.
CQWs were prepared by LP MOVPE on n-GaSb substrateswith various widths of InAs and GaSb QWs surrounded by AlSb barriers.
Shubnikov-de Haas oscillations were measured by electron paramagnetic resonance for differently oriented magnetic field up to 14 kOe at temperatures from 2.7 K to 20 K.
Permanent Link: http://hdl.handle.net/11104/0263308