0577360 - FZÚ 2024 RIV US eng J - Journal Article
Popelář, Tomáš - Galář, Pavel - Matějka, Filip - Morselli, G. - Ceroni, P. - Kůsová, Kateřina
Universal radiative lifetimes in the long-lived luminescence of Si quantum dots.
Journal of Physical Chemistry C. Roč. 127, č. 41 (2023), s. 20426-20437. ISSN 1932-7447. E-ISSN 1932-7455
R&D Projects: GA ČR(CZ) GA23-05837S
Institutional support: RVO:68378271
Keywords : silicon quantum dots * internal quantum yield * photoluminescence lifetime
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.3, year: 2023
Method of publishing: Open access

We quantify the dependence of radiative lifetimes of long-lived photoluminescence of silicon quantum dots on the emission photon energy and show that the derived dependence is universal in silicon quantum dots regardless of the fabrication method.
Permanent Link: https://hdl.handle.net/11104/0348594