High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer

0553457 - FZÚ 2023 RIV GB eng J - Journal Article
Yadav, M. - Kashir, Alireza - Oh, S. - Nikam, R.D. - Kim, H. - Jang, H. - Hwang, H.
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer.
Nanotechnology. Roč. 33, č. 8 (2022), č. článku 085206. ISSN 0957-4484. E-ISSN 1361-6528
Institutional support: RVO:68378271
Keywords : interfacial layer * annealing temperature * remnant polarization * sub-5 nm HZO * wakeup free * TEM * XPS
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.5, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6528/ac3a38

The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO2 based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/ HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrOx suggest the strong effect of IrOx in controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation.
Permanent Link: http://hdl.handle.net/11104/0330727