Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

0542789 - FZÚ 2022 RIV NL eng J - Journal Article
Kondrat, O. - Holomb, R. - Mitsa, A. - Veres, M. - Csik, A. - Takats, V. - Duchoň, T. - Veltruská, K. - Vondráček, Martin - Tsud, N. - Mitsa, V. - Matolín, V. - Prince, K. C.
Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media.
Applied Surface Science. Roč. 518, July (2020), č. článku 146240. ISSN 0169-4332. E-ISSN 1873-5584
Institutional support: RVO:68378271
Keywords : As-Se nanolayers * synchrotron radiation photoelectron spectroscopy * photoinduced changes * reversibility * Valence band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.707, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.apsusc.2020.146240

Reversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s, while the opposite effect was detected during further thermal treatment.
Permanent Link: http://hdl.handle.net/11104/0320136