Front-side diamond deposition on the GaN membranes

0540751 - FZÚ 2021 RIV US eng C - Conference Paper (international conference)
Izsák, Tibor - Vanko, G. - Držík, M. - Kasemann, S. - Zehetner, J. - Vojs, M. - Zaťko, B. - Potocký, Štěpán - Kromka, Alexander
Front-side diamond deposition on the GaN membranes.
Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. New York: IEEE, 2020 - (Vanko, G.; Izsák, T.), s. 42-45. ISBN 978-1-7281-9776-0.
[International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./. Smolenice (SK), 11.10.2020-14.10.2020]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) 8X20035; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * GaN * CVD * stress
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

We present technological issues in the deposition of diamond films on the GaN membranes. Many wrinkles and the thicker diamond layer were observed at the membrane centre and poor quality diamond outside the membrane area. The deflection of the membranes were analyzed by a bulging method using white light interferometry. The membrane bending was discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials. Optimized technological procedure was proposed to obtain both-side diamond-coated GaN membranes with minimized effect of wrinkling and induced residual stress.
Permanent Link: http://hdl.handle.net/11104/0318357