Atomic-scale charge distribution mapping of single substitutional p- and n-type dopants in graphene

0539691 - FZÚ 2021 RIV US eng J - Journal Article
Mallada Faes, Benjamin Jose - Edalatmanesh, S. - Lazar, P. - López, Roso Redondo Jesús R. - Gallardo Caparrós, Aurelio Jesús - Zbořil, Radek - Jelínek, Pavel - Švec, Martin - De La Torre Cerdeño, Bruno
Atomic-scale charge distribution mapping of single substitutional p- and n-type dopants in graphene.
ACS Sustainable Chemistry & Engineering. Roč. 8, č. 8 (2020), s. 3437-3444. ISSN 2168-0485. E-ISSN 2168-0485
R&D Projects: GA ČR(CZ) GA18-09914S; GA ČR(CZ) GX19-27454X; GA ČR GJ17-24210Y
Grant - others:AV ČR(CZ) AP1601
Program: Akademická prémie - Praemium Academiae
Institutional support: RVO:68378271 ; RVO:61388963
Keywords : electronic-structure * SPM * graphene * doping * DFT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UOCHB-X)
Impact factor: 8.198, year: 2020
Method of publishing: Limited access
https://doi.org/10.1021/acssuschemeng.9b07623

To improve the understanding of the role of p- and n-type dopants in graphene’s local chemical activity and quantification of its interaction with single molecules, we report an atomic-scale investigation of single boron (B) and nitrogen (N) dopants in graphene and their interactions with CO molecules by means of atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) experiments and theoretical calculations. We infer that N/B doping significantly increases/lowers the chemical interaction of graphene with individual CO molecules as a result of weak electrostatic forces induced by distinct charge distribution around the dopant site. High-resolution AFM images allow dopant discrimination and their atomic-scale structural characterization, which may be crucial for the atomic-scale design of graphene derivatives with relevant potential applications in molecular sensing and catalysis.
Permanent Link: http://hdl.handle.net/11104/0317401