Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

0536232 - FZÚ 2021 RIV GB eng J - Journal Article
Tulić, S. - Waitz, T. - Romanyuk, Olexandr - Varga, Marián - Čaplovičová, M. - Habler, G. - Vretenár, V. - Kotlár, M. - Kromka, Alexander - Rezek, Bohuslav - Skákalová, V.
Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier.
RSC Advances. Roč. 10, č. 14 (2020), s. 8224-8232. E-ISSN 2046-2069
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : oxide barrier * Si substrates * nanocrystalline diamond
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.361, year: 2020
Method of publishing: Open access

Manocrystalline diamond (NCD)films grown on Si substrates by microwave plasma enhanced chemicalvapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them witha conductive layer. Results of transmission electron microscopy including electron energy-lossspectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates ( 5 nm nativeSiO2) has been damaged by microwave plasma during the early stage of NCD growth. During the heattreatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ninanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producingpyramidal crystals of NiSi2and SiC nanocrystals. The latter are found impinged into the NiSi2pyramidsbut only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phasemorphology of the samples is also reflected in the temperature dependence of electrical conductivity,where multiple pathways of the electronic transport dominate in different temperature regions. Wepresent models explaining the observed cascade of solid-state reactions and resulting electronictransport properties of such heterostructures.
Permanent Link: http://hdl.handle.net/11104/0314049