Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

0496537 - FZÚ 2019 RIV CZ eng C - Conference Paper (international conference)
Stuchlík, Jiří - Fajgar, Radek - Kupčík, Jaroslav - Remeš, Zdeněk - Stuchlíková, The-Ha
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles.
Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application. Ostrava: Tanger Ltd., 2018, s. 123-127. ISBN 9788087294819.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. Brno (CZ), 18.10.2017-20.10.2017]
R&D Projects: GA MŠMT(CZ) LTC17029
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : PECVD * a-Si:H diode structures * Ge * nanoparticles
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UCHP-M)

Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Permanent Link: http://hdl.handle.net/11104/0289330