Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I

0488135 - FZÚ 2018 RIV GB eng J - Journal Article
Kohn, V.G. - Khikhlukha, Danila
Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I.
Acta Crystallographica Section A-Foundation and Advances. Roč. 72, May (2016), s. 349-356. ISSN 2053-2733. E-ISSN 2053-2733
R&D Projects: GA MŠMT EF15_008/0000162; GA MŠMT ED1.1.00/02.0061
Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162; ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061
Institutional support: RVO:68378271
Keywords : X-ray diffraction * silicon crystal * six-beam diffraction * section topography * computer simulations
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 5.725, year: 2016

This paper reports computer simulations of the transmitted-beam intensity distribution for the case of six-beam (000, 220, 242, 044,224,202) diffraction of X-rays in a perfect silicon crystal of thickness 1 mm. Both the plane-wave angular dependence and the six-beam section topographs, which are usually obtained in experiments with a restricted beam (two-dimensional slit), are calculated. The angular dependence is calculated in accordance with Ewald's theory. The section topographs are calculated from the angular dependence by means of the fast Fourier transformation procedure. This approach allows one to consider, for the first time, the transformation of the topograph's structure due to the two-dimensional slit sizes and the distance between the slit and the detector. The results are in good agreement with the results of other works and with the experimental data.
Permanent Link: http://hdl.handle.net/11104/0282752