Number of the records: 1  

Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition

  1. 1.
    0487097 - FZÚ 2018 RIV JP eng A - Abstract
    Ižák, Tibor - Jirásek, Vít - Vanko, G. - Dzuba, J. - Babchenko, O. - Držík, M. - Kromka, Alexander
    Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition.
    Book of Abstracts of International Symposium on Surface Science /8./ (ISSS-8). Tsukuba: SSSJ, 2017.
    [International Symposium on Surface Science /8./ (ISSS-8). 22.10.2017-26.10.2017, Tsukuba]
    R&D Projects: GA ČR(CZ) GBP108/12/G108
    Institutional support: RVO:68378271
    Keywords : diamond * GaN * Raman spectroscopy * stress
    OECD category: Fluids and plasma physics (including surface physics)
    http://www.sssj.org/isss8/timetable.html#poster-program

    Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.

    Permanent Link: http://hdl.handle.net/11104/0281778

     
     
Number of the records: 1