Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

0481233 - FZÚ 2018 RIV SK eng J - Journal Article
Dragounová, Kateřina - Ižák, Tibor - Kromka, Alexander - Potůček, Z. - Bryknar, Z. - Potocký, Štěpán
Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 68, č. 7 (2017), s. 3-9. ISSN 1335-3632. E-ISSN 1339-309X
R&D Projects: GA MŠMT(CZ) LD15003; GA ČR(CZ) GA14-04790S
Institutional support: RVO:68378271
Keywords : diamond * Si-V centre * photoluminescence * microwave-plasma enhanced CVD * activation energy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.508, year: 2017

Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3 , Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈ 3.5 cm−1 ) due to tension in the diamond film. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.
Permanent Link: http://hdl.handle.net/11104/0276829