Structural and optical properties of vanadium ion-implanted GaN

0479636 - ÚJF 2018 RIV NL eng J - Journal Article
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Klímová, K. - Sedmidubský, D. - Mikulics, M. - Lorinčík, Jan - Veselá, D. - Bottger, R. - Akhmadaliev, S.
Structural and optical properties of vanadium ion-implanted GaN.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 406, SEP (2017), s. 53-57. ISSN 0168-583X. E-ISSN 1872-9584
R&D Projects: GA ČR GA13-20507S; GA ČR GA15-01602S; GA MŠMT LM2015056
Institutional support: RVO:61389005 ; RVO:67985882
Keywords : GaN implantation * RBS-channelling * optical properties of metal-implanted GaN
OECD category: Nuclear physics; Electrical and electronic engineering (URE-Y)
Impact factor: 1.323, year: 2017

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.
Permanent Link: http://hdl.handle.net/11104/0275610