The deposition of germanium nanoparticles on hydrogenated amorphous silicon

0478395 - FZÚ 2018 RIV CZ eng C - Conference Paper (international conference)
Stuchlík, Jiří - Volodin, V.A. - Shklyaev, A.A. - Stuchlíková, The-Ha - Ledinský, Martin - Čermák, Jan - Kupčík, Jaroslav - Fajgar, Radek - Mortet, Vincent - More Chevalier, Joris - Ashcheulov, Petr - Purkrt, Adam - Remeš, Zdeněk
The deposition of germanium nanoparticles on hydrogenated amorphous silicon.
NANOCON 2016 8th International Conference on Nanomaterials - Research & Application. Conference proceedings. Ostrava: TANGER Ltd., 2017, s. 133-137. ISBN 978-80-87294-71-0.
[NANOCON 2016. International Conference on Nanomaterials - Research and Application /8./. Brno (CZ), 19.10.2016-21.10.2016]
R&D Projects: GA ČR GA13-12386S; GA ČR GA13-31783S
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : Ge nanoparticles * a-Si:H * PECVD * MBE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UCHP-M)
https://www.nanocon.eu/cz/sbornik-nanocon-2016/

We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Permanent Link: http://hdl.handle.net/11104/0274527