Near infrared photoluminescence of the hydrogenated amorphous silicon thin films with in-situ embedded silicon nanoparticles

0474916 - FZÚ 2018 RIV CZ eng J - Journal Article
Remeš, Zdeněk - Stuchlík, Jiří - Purkrt, Adam - Ledinský, Martin - Kupčík, Jaroslav
Near infrared photoluminescence of the hydrogenated amorphous silicon thin films with in-situ embedded silicon nanoparticles.
Ceramics - Silikáty. Roč. 61, č. 2 (2017), s. 136-140. ISSN 0862-5468. E-ISSN 1804-5847
R&D Projects: GA ČR GC16-10429J
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271 ; RVO:61388980
Keywords : amorphous silicon * chemical vapor deposition * photothermal deflection spectroscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UACH-T)
Impact factor: 0.680, year: 2017

The intrinsic hydrogenated silicone layers with embedded silicon nanoparticles were grown in-situ at 250°C on glass substrates by the radio frequency plasma enhanced chemical vapor deposition (CVD) from silane highly diluted in hydrogen. The changes in the optical absorption coefficient were detected by the photothemal deflection spectroscopy (PDS). The transition from amorphous to crystalline phase for samples deposited at 5 6 % silane concentration correlates to the crystalline volume fraction about 50 % as detected by Raman spectroscopy and the high resolution transmission electron microscopy (HRTEM). The room temperature photo-luminescence increases significantly with increased crystallinity volume fraction but diminishes abruptly when crystallinity volume fraction exceeds above 80 %. The photoluminescence intensity strongly correlates with the presence of isolated silicon nanoparticles in the mixed amorphous and crystalline phase.
Permanent Link: http://hdl.handle.net/11104/0271823