Growth and scintillation properties of 3 in. diameter Ce doped Gd.sub.3./sub.Ga.sub.3./sub.Al.sub.2./sub.O.sub.12./sub. scintillation single crystal

0470883 - FZÚ 2017 RIV NL eng J - Journal Article
Kamada, K. - Shoji, Y. - Kochurikhin, V.V. - Okumura, S. - Yamamoto, S. - Nagura, A. - Yeom, J.Y. - Kurosawa, S. - Yokota, Y. - Ohashi, Y. - Nikl, Martin - Yoshikawa, A.
Growth and scintillation properties of 3 in. diameter Ce doped Gd₃Ga₃Al₂O₁₂ scintillation single crystal.
Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. ISSN 0022-0248. E-ISSN 1873-5002.
[American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
R&D Projects: GA MŠMT(CZ) LH14266; GA ČR GJ15-18300Y
EU Projects: European Commission(XE) 644260 - INTELUM
Institutional support: RVO:68378271
Keywords : single crystal growth * oxides * scintillator materials * scintillators
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.751, year: 2016

The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.
Permanent Link: http://hdl.handle.net/11104/0268397