Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

0470423 - FZÚ 2017 RIV NL eng J - Journal Article
Procházka, Václav - Cifra, Michal - Kulha, Pavel - Ižák, Tibor - Rezek, Bohuslav - Kromka, Alexander
Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors.
Applied Surface Science. Roč. 395, Feb (2017), s. 214-219. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : nanocrystalline diamond * yeast cells * field-effect transistor * transfer characteristics pH sensitivity
OECD category: Biophysics
Impact factor: 4.439, year: 2017

Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells.

Permanent Link: http://hdl.handle.net/11104/0268067