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Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

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    0450317 - FZÚ 2016 RIV US eng J - Journal Article
    Maryško, Miroslav - Hejtmánek, Jiří - Laguta, Valentyn - Sofer, Z. - Sedmidubský, D. - Šimek, P. - Veselý, M. - Mikulics, M. - Buchal, C. - Macková, Anna - Malinský, Petr - Wilhelm, R. A.
    Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films.
    Journal of Applied Physics. Roč. 117, č. 17 (2015), "17B907-1"-"17B907-4". ISSN 0021-8979. E-ISSN 1089-7550
    R&D Projects: GA ČR GA13-20507S; GA ČR(CZ) GBP108/12/G108; GA MŠMT LM2011019
    Institutional support: RVO:68378271 ; RVO:61389005
    Keywords : magnetic field, * ferromagnetic and paramagnetic magnetization
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 2.101, year: 2015

    The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5x5mm2 were positioned in the classical straws and within an estimated accuracy of 10-6 emu, no ferromagnetic moment was detected in the temperature region of 2–300K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T=2K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion.
    Permanent Link: http://hdl.handle.net/11104/0251648

     
     
Number of the records: 1  

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