On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis

0449863 - FZÚ 2016 RIV SK eng C - Conference Paper (international conference)
Marton, M. - Mikolášek, M. - Bruncko, J. - Novotný, I. - Ižák, Tibor - Kováčová, S. - Vojs, M.
On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis.
Nanosvet s vákuom. Nanoworld with vacuum. Bratislava: Slovenská vákuová spoločnosť, 2015 - (Michalka, M.; Vincze, A.; Veselý, M.), s. 20-24. ISBN 978-80-971179-6-2.
[Škola vákuovej techniky /18./. Štrbské Pleso (SK), 07.10.2015-11.10.2015]
R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠMT(CZ) 7AMB14SK024
Institutional support: RVO:68378271
Keywords : ZnO * diamond * heterojunction * electrical properties
Subject RIV: BM - Solid Matter Physics ; Magnetism

HFCVD and sputtering deposition techniques were used for preparation of rectifying p-n junction from ZnO (n) and BDD (p) layers. The properties of individual layers were optimized in order to obtain low doping level allowing the junction to operate as a diode. Adhesion and other properties of the diamond layers were optimized through the deposition conditions and use of an interlayer as well. Rectifying ratio of 55 was reached for the first prepared structures; nevertheless the technological procedures are perspective and capable of further optimization.
Permanent Link: http://hdl.handle.net/11104/0251288