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Crystal growth and luminescence properties of Yb-doped Gd.sub.3./sub.Al.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub. infra-red scintillator

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    0440071 - FZÚ 2015 RIV NL eng J - Journal Article
    Suzuki, A. - Kurosawa, S. - Nagata, S. - Yamamura, T. - Pejchal, Jan - Yamaji, A. - Yokota, Y. - Shirasaki, K. - Homma, Y. - Aoki, D. - Shikama, T. - Yoshikawa, A.
    Crystal growth and luminescence properties of Yb-doped Gd3Al2Ga3O12 infra-red scintillator.
    Optical Materials. Roč. 36, č. 9 (2014), s. 1484-1487. ISSN 0925-3467. E-ISSN 1873-1252
    Institutional support: RVO:68378271
    Keywords : infra-red scintillator * radiation therapy * Yb:GAGG * bulk crystal
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.981, year: 2014

    Infra-red scintillator crystal 1-mol%-Yb-doped Gd3Al2Ga3O12 has been studied as a novel implantable radiation monitor in radiation therapy.Photoluminescence peaks were detected around 970 and 1030 nm under the 940 nm excitation with a Xe lamp. Infra-red scintillation emissions were clearly observed around 970 and 1030 nm due to Yb3+ 4f–4f transitions under X-ray excitation. Therefore, these results suggest that Yb-doped Gd3Al2Ga3O12 might be used as an infra-red scintillator material.
    Permanent Link: http://hdl.handle.net/11104/0243209

     
     
Number of the records: 1  

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