High-rate reactive deposition of transparent SiO.sub.2./sub. films containing low amount of Zr from molten magnetron target

0437497 - FZÚ 2015 RIV CH eng J - Journal Article
Musil, Jindřich - Satava, V. - Baroch, P.
High-rate reactive deposition of transparent SiO₂ films containing low amount of Zr from molten magnetron target.
Thin Solid Films. Roč. 519, č. 2 (2010), s. 775-777. ISSN 0040-6090. E-ISSN 1879-2731
Institutional research plan: CEZ:AV0Z10100520
Keywords : sputtering * evaporation * reactive deposition * target power density
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.909, year: 2010

The paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
Permanent Link: http://hdl.handle.net/11104/0241059