0434235 - FZÚ 2015 RIV GB eng J - Journal Article
Martí, Xavier - Fina, I. - Frontera, C. - Liu, J. - Wadley, P. - He, P. - Paull, R.J. - Clarkson, J.D. - Kudrnovský, Josef - Turek, Ilja - Kuneš, Jan - Yi, D. - Chu, J.-H. - Nelson, C.T. - You, L. - Arenholz, E. - Salahuddin, S. - Fontcuberta, J. - Jungwirth, Tomáš - Ramesh, R.
Room-temperature antiferromagnetic memory resistor.
Nature Materials. Roč. 13, č. 4 (2014), s. 367-374. ISSN 1476-1122. E-ISSN 1476-4660
R&D Projects: GA MŠMT(CZ) LM2011026; GA ČR(CZ) GAP204/11/1228
EU Projects: European Commission(XE) 268066 - 0MSPIN
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional support: RVO:68378271 ; RVO:68081723
Keywords : spintronics * antiferromagnets * memories
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 36.503, year: 2014 ; AIS: 17.85, rok: 2014
DOI: https://doi.org/10.1038/nmat3861

We report a room-temperature bistable antiferromagnetic memory which produces negligible stray fields and is insensitive to strong magnetic fields.
Permanent Link: http://hdl.handle.net/11104/0238338