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On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells
- 1.0427003 - FZÚ 2015 RIV NL eng J - Journal Article
Qiu, Y. - Kunz, O. - Fejfar, Antonín - Ledinský, Martin - Teik Chan, B. - Gordon, I. - Van Gestel, D. - Venkatachalm, S. - Egan, R.
On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells.
Solar Energy Materials and Solar Cells. Roč. 122, MAR (2014), s. 31-39. ISSN 0927-0248. E-ISSN 1879-3398
R&D Projects: GA MŠMT 7E10061; GA MŠMT(CZ) LM2011026
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional support: RVO:68378271
Keywords : silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 5.337, year: 2014
http://www.sciencedirect.com/science/article/pii/S0927024813006016
The hydrogen plasma passivation of thin film polycrystalline silicon (pc-Si) was investigated in conjunction with plasma texturing proces to make efficient heterojunction solar cells. Combining plasma pre-texturing with high-temperature hydrogenation, the best 2 µm-thick pc-Si heterojunction solar cell reaches an efficiency of 8.54%.
Permanent Link: http://hdl.handle.net/11104/0232607
Number of the records: 1