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Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
- 1.0424992 - FZÚ 2014 AU eng C - Conference Paper (international conference)
Pham, T.T. - Stuchlíková, The-Ha - Ledinský, Martin - Hruška, Karel - Le, V.T.H. - Stuchlík, Jiří
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used.
ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). Cairn: IPCS International Plasma Chemistry Society, 2013. IPSC, 21. ISBN N.
[International Symposium on Plasma Chemistry (ISPC 21)/21./. Cairns Convention Centre (AU), 04.08.2013-09.08.2013]
R&D Projects: GA ČR GA203/09/1088; GA MŠMT LH12236
Grant - others:AVČR(CZ) M100101216; AVČR(CZ) M100101217
Institutional support: RVO:68378271
Keywords : Si:H thin film * ZnO * PECVD * catalytic effect * Si-NWs
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
A research some convenient structure of silicon thin film solar cells with higher solar energy conversion is at area of interest up to now. In this paper we focus on the fabrication and study the properties of Si:H thin film which was formed on the transparent conductive thin film ZnO. We study a possibilities how to deposit by PECVD technique with assistance of catalytic effect of Sn an optimal structure of Si:H thin film /amorphouse + microcrystalline + eventually with contain of Si nanowires
Permanent Link: http://hdl.handle.net/11104/0230960
Number of the records: 1