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Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators

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    0422109 - FZÚ 2014 RIV DE eng J - Journal Article
    Laguta, Valentyn - Nikl, Martin
    Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators.
    Physica Status Solidi B. Roč. 250, č. 2 (2013), s. 254-260. ISSN 0370-1972. E-ISSN 1521-3951
    R&D Projects: GA MŠMT(CZ) LM2011029; GA ČR GAP204/12/0805; GA AV ČR IAA100100810
    Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132
    Institutional support: RVO:68378271
    Keywords : scintillators * point defects * electron spin resonance * polarons
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.605, year: 2013

    Selected results of Electron Spin Resonance study of various point defects, which participate in the processes of charge carriers transfer and capture in the family of practically important complex oxide single crystal scintillators based on tungstates, aluminum perovskites and yt-trium (lutetium) orthosilicates are presented. Particular attention is paid to the most natural defects inevitably present in oxide materials such as anion and cation va-cancies, antisite defects, self-trapped electron and hole states. Current understanding of the nature of such charge trapping states and mechanisms of their creation in the selected oxide scintillation materials is discussed as well.
    Permanent Link: http://hdl.handle.net/11104/0228314

     
     
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