LAYERS OF METALS NANOPARTICLES ON VARIOUS SEMICONDUCTORS FOR HYDROGEN DETECTION

0387607 - ÚFE 2013 RIV CZ eng C - Conference Paper (international conference)
Černohorský, Ondřej - Žďánský, Karel - Yatskiv, Roman - Grym, Jan
LAYERS OF METALS NANOPARTICLES ON VARIOUS SEMICONDUCTORS FOR HYDROGEN DETECTION.
NANOCON 2012, 4th International Conference Proceedings. Ostrava: TANGER Ltd, 2012. ISBN 978-80-87294-32-1.
[NANOCON 2012. International Conference /4./. Brno (CZ), 23.10.2012-25.10.2012]
R&D Projects: GA ČR GA102/09/1037
Institutional support: RVO:67985882
Keywords : Schottky barrier * binary semiconductors * metal nanoparticles
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H2 in the air, where the current change is over one order of magnitude
Permanent Link: http://hdl.handle.net/11104/0216629