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Influence of CO.sub.2./sub. concentration on diamond film morphology in pulsed linear antenna microwave plasma CVD system

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    0375441 - FZÚ 2012 RIV CZ eng K - Conference Paper (Czech conference)
    Domonkos, M. - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Hruška, Karel
    Influence of CO2 concentration on diamond film morphology in pulsed linear antenna microwave plasma CVD system.
    Proceedings of the 2nd Winter Education Seminar. Praha: FZÚ AV ČR, 2011 - (Remeš, Z.; Kromka, A.; Ledinský, M.), s. 33-37. ISBN 978-80-260-0911-5.
    [Winter educational seminar /2./. Rokytnice n. J. (CZ), 16.02.2011-18.02.2011]
    R&D Projects: GA MŠk(CZ) MEB0810082; GA AV ČR KAN400100701; GA AV ČR(CZ) IAAX00100902; GA MŠk(CZ) MEB0810081
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : nanocrystalline diamond * large area growth * growth rate * CO2 addition * SEM * Raman Spectroscopy
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    The diamond films were deposited in a pulsed linear antenna microwave plasma system. The influence of CO2 addition into the standard CH4/H2 gas mixture on the diamond film morphology was investigated. The concentration of CO2 varied from 0% up to 80% in CO2/CH4/H2 gas mixture. The film morphology, the growth rate and the ratio of sp3/sp2 carbon bonds were investigated. It was found that increasing of CO2 concentration resulted in enhanced growth rate (from 20 up to 36 nm/h). However, at very high CO2 concentrations (>40%) dominates etching instead of growth process. Moreover, we found that increasing of CO2 enhances the diamond film quality.
    Permanent Link: http://hdl.handle.net/11104/0208091

     
     
Number of the records: 1