Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD

0369139 - ÚJF 2012 RIV US eng J - Journal Article
Zhang, G. - Janssens, S.D. - Vanacken, J. - Timmermans, M. - Vacík, Jiří - Ataklti, G.W. - Decelle, W. - Gillijns, W. - Goderis, B. - Haenen, K. - Wagner, P. - Moshchalkov, V.V. … Total 13 authors
Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD.
Physical Review. B. Roč. 84, č. 21 (2011), 214517/1-214517/10. ISSN 1098-0121
Institutional research plan: CEZ:AV0Z10480505
Keywords : Nanocrystalline diamond * Superconducting transition
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.691, year: 2011

The grain size dependence of the superconducting transition, the normal state resistivity, and the insulating behavior at high magnetic fields are studied on a series of boron-doped nanocrystalline diamond (B:NCD) thin films with different grain sizes. The systematic change of the grain size is achieved by varying the methane-to-hydrogen ratio (C/H ratio) for the growth of different B:NCD films. Even though a fixed trimethylboron- (TMB) to-methane gas ratio is supposed to induce the identical boron-doping level in all the B:NCD films, the boron concentration and the carrier density are found to be a decreasing function of the grain size. Another consequence of the increase in grain size is the decreasing grain boundary density.
Permanent Link: http://hdl.handle.net/11104/0203280