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Unconventional Imaging with Backscattered Electrons
- 1.0367773 - ÚPT 2012 RIV US eng J - Journal Article
Müllerová, Ilona - Mikmeková, Šárka - Hovorka, Miloš - Frank, Luděk
Unconventional Imaging with Backscattered Electrons.
Microscopy and Microanalysis. Roč. 17, Suppl. 2 (2011), s. 900-901. ISSN 1431-9276. E-ISSN 1435-8115
Institutional research plan: CEZ:AV0Z20650511
Keywords : SEM * low energies * grain contrast * dopant contrast * internal stress
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.007, year: 2011
Immesrsion of the sample in a scanning electron microscope to strong electric field enables one to acquire the backscattered electrons (BSE) throughout full energy and angle range of emission. BSE emitted at high angles off the surface normal provide extended crystallographic information with high grain contrast sensitive to details including visualization of the internal stress. At very low energies the BSE yield may serve as fingerprinting the grain orientation. The dopant contrast can be obtained via injection of very slow electrons.
Permanent Link: http://hdl.handle.net/11104/0202327
Number of the records: 1