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Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
- 1.0366876 - FZÚ 2012 RIV GB eng J - Journal Article
Stolichnov, I. - Riester, S.W.E. - Mikheev, E. - Setter, N. - Rushforth, A.W. - Edmonds, K. W. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Jungwirth, Tomáš - Trodahl, H.J.
Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers.
Nanotechnology. Roč. 22, č. 25 (2011), 254004/1-254004/13. ISSN 0957-4484. E-ISSN 1361-6528
R&D Projects: GA MŠMT LC510; GA MŠMT(CZ) 7E08087
EU Projects: European Commission(XE) 214499 - NAMASTE
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional research plan: CEZ:AV0Z10100521
Keywords : ferroelectrics * ferromagnetic semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.979, year: 2011
This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization.
Permanent Link: http://hdl.handle.net/11104/0201714
Number of the records: 1