Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO(2)

0365920 - ÚJF 2012 RIV RU eng J - Journal Article
Achkeev, A. A. - Khaibullin, R. I. - Tagirov, L.R. - Macková, Anna - Hnatowicz, Vladimír - Cherkashin, N.
Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO(2).
Physics of the Solid State. Roč. 53, č. 3 (2011), s. 543-553. ISSN 1063-7834. E-ISSN 1090-6460
R&D Projects: GA ČR GA106/09/0125
Institutional research plan: CEZ:AV0Z10480505
Keywords : ROOM-TEMPERATURE FERROMAGNETISM * SEMICONDUCTORS * OXIDE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.711, year: 2011

This paper reports on the results of the calculation of the depth distribution profiles of the concentration of the impurity implanted into an anisotropic crystalline material. The sputtering of the irradiated material, fast one-dimensional diffusion of the impurity along structural channels, and accumulation of the implanted impurity at different depths have been taken into account. The results of the calculations have been compared with the experimental distribution profiles of cobalt ions implanted into the crystal structure of rutile TiO(2) along and across structural channels at different temperatures of the irradiated substrate.
Permanent Link: http://hdl.handle.net/11104/0006615