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Magnetism in GaN layers implanted by La, Gd, Dy and Lu

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    0365408 - ÚJF 2012 RIV CH eng J - Journal Article
    Sofer, Z. - Sedmidubský, D. - Moram, M. - Macková, Anna - Buchal, C. - Hardtdegen, H. - Václavů, M. - Peřina, Vratislav - Groetzschel, R. - Mikulics, M. - Hejtmánek, Jiří - Maryško, Miroslav
    Magnetism in GaN layers implanted by La, Gd, Dy and Lu.
    Thin Solid Films. Roč. 519, č. 18 (2011), s. 6120-6125. ISSN 0040-6090. E-ISSN 1879-2731
    R&D Projects: GA ČR GA104/09/1269; GA ČR GA106/09/0125; GA ČR GA104/09/0621
    Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521
    Keywords : Magnetic semiconductors * III-V semiconductors * Ion implantation * X-ray diffraction * Rutherford backscattering spectroscopy
    Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
    Impact factor: 1.890, year: 2011

    We present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13) to 4 x 10(17) The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping.
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