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Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds
- 1.0364501 - FZÚ 2012 RIV US eng J - Journal Article
Jungwirth, Tomáš - Novák, Vít - Martí, X. - Cukr, Miroslav - Máca, František - Shick, Alexander - Mašek, Jan - Horodyská, P. - Němec, P. - Holý, V. - Zemek, Josef - Kužel, Petr - Němec, I. - Gallagher, B. L. - Campion, R. P. - Foxon, C. T. - Wunderlich, Joerg
Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds.
Physical Review. B. Roč. 83, č. 3 (2011), , , "035321-1"-"035321-6". ISSN 1098-0121
R&D Projects: GA MŠMT LC510; GA AV ČR KAN400100652; GA MŠMT(CZ) 7E08087
EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE; European Commission(XE) 268066 - 0MSPIN
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521
Keywords : antiferromagnetic semiconductors * spintronics * molecular beam epitaxy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.691, year: 2011
Our combined experimental and theoretical work on LiMnAs provides basic prerequisite for the systematic research of this class of materials by demonstrating the feasibility to grow single crystals of group-I alkali metal compounds by molecular beam epitaxy, by demonstrating the semiconducting band structure of the I-Mn-V's, and by analyzing their spin-orbit coupling characteristics favorable for spintronics.
Permanent Link: http://hdl.handle.net/11104/0199971
Number of the records: 1