Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

0364316 - FZÚ 2012 RIV US eng J - Journal Article
Kopecký, Miloš - Kub, Jiří - Máca, František - Mašek, Jan - Pacherová, Oliva - Rushforth, A.W. - Gallagher, B. L. - Campion, R. P. - Novák, Vít - Jungwirth, Tomáš
Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P).
Physical Review. B. Roč. 83, č. 23 (2011), , , "235324-1"-"235324-7". ISSN 1098-0121
R&D Projects: GA AV ČR IAA100100912; GA MŠMT(CZ) 7E08087
EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521
Keywords : ferrmagnetic semiconductor * crystal structure * magnetic anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.691, year: 2011
http://prb.aps.org/abstract/PRB/v83/i23/e235324

We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes.
Permanent Link: http://hdl.handle.net/11104/0199834