Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

0361428 - FZÚ 2013 RIV NL eng J - Journal Article
Hara, K. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela … Total 74 authors
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S83"-"S89". ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA MŠMT LA08032
Institutional research plan: CEZ:AV0Z10100502
Keywords : p-bulk silicon * microstrip * charge collection * radiation damage
Subject RIV: BF - Elementary Particles and High Energy Physics
Impact factor: 1.207, year: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.090

We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
Permanent Link: http://hdl.handle.net/11104/0198740