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Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Bilayer 12C/13C Graphene

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    0359533 - ÚFCH JH 2012 RIV US eng J - Journal Article
    Kalbáč, Martin - Farhat, H. - Kong, J. - Janda, Pavel - Kavan, Ladislav - Dresselhaus, M. S.
    Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Bilayer 12C/13C Graphene.
    Nano Letters. Roč. 11, č. 5 (2011), s. 1957-1963. ISSN 1530-6984. E-ISSN 1530-6992
    R&D Projects: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA MŠMT LC510; GA ČR GC203/07/J067; GA ČR GAP204/10/1677
    Institutional research plan: CEZ:AV0Z40400503
    Keywords : graphene * bilayer * Raman Spectroscopy
    Subject RIV: CG - Electrochemistry
    Impact factor: 13.198, year: 2011

    Bilayer graphene was prepared by the subsequent deposition of a 13C single-layer graphene and a 12C single-layer graphene on top of a SiO2/Si substrate. The bilayer graphene thus prepared was studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The Raman frequencies of the 13C graphene bands are significantly shifted with respect to those of 12C graphene, which allows us to investigate the single layer components of bilayer graphene individually. It is shown that the bottom layer of the bilayer graphene is significantly doped from the substrate, while the top layer does not exhibit a signature of the doping from the environment. The electrochemical doping has the same effect on the charge carrier concentration at the top and the bottom layer despite the top layer being the only layer in contact with the electrolyte.
    Permanent Link: http://hdl.handle.net/11104/0197308

     
     
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