Effect of nitrogen doping on TiO.sub.x./sub.N.sub.y./sub. thin film formation at reactive high-power pulsed magnetron sputtering

0358730 - FZÚ 2012 RIV GB eng J - Journal Article
Straňák, Vítězslav - Quaas, M. - Bogdanowicz, R. - Steffen, H. - Wulff, H. - Hubička, Zdeněk - Tichý, M. - Hippler, R.
Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering.
Journal of Physics D-Applied Physics. Roč. 43, č. 28 (2010), s. 1-7. ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA AV ČR KAN301370701; GA MŠMT(CZ) 1M06002
Grant - others:AVČR(CZ) M100100915
Institutional research plan: CEZ:AV0Z10100522
Keywords : magnetron sputtering * TiO₂ * pulse discharge * XRD * band gap
Subject RIV: BL - Plasma and Gas Discharge Physics
Impact factor: 2.105, year: 2010
http://iopscience.iop.org/0022-3727/43/28/285203/

The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the TiO lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed TiN bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current.
Permanent Link: http://hdl.handle.net/11104/0196679