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Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
- 1.0357129 - FZÚ 2011 RIV US eng J - Journal Article
Mašek, Jan - Máca, František - Kudrnovský, Josef - Makarovský, O. - Eaves, L. - Campion, R. P. - Edmonds, K. W. - Rushforth, A.W. - Foxon, C. T. - Gallagher, B. L. - Novák, Vít - Sinova, Jairo - Jungwirth, Tomáš
Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As.
Physical Review Letters. Roč. 105, č. 22 (2010), 227202/1-227202/4. ISSN 0031-9007. E-ISSN 1079-7114
R&D Projects: GA ČR GA202/07/0456; GA MŠMT LC510; GA AV ČR KAN400100652
EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional research plan: CEZ:AV0Z10100520
Keywords : gallium arsenide * semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 7.621, year: 2010
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parametrization and the full potential local-density approximation+U calculations give a very similar band structure whose microscopic spectral character is consistent with the physical premise of the k·p kinetic-exchange model.
Permanent Link: http://hdl.handle.net/11104/0195468
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