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Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects
- 1.0355867 - FZÚ 2011 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Ladzianský, M. - Kindl, Dobroslav - Nečas, V.
Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects.
ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 207-210. ISBN 978-1-4244-8572-7.
[ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 25.10.2010-27.10.2010]
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI GaAs detectors * neutron bombardment * deep levels * PICTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Degradation of semi-insulating GaAs detectors after fast neutron bombardment was investigated by means of I-V and PICTS measurements. Significant rise of detector reverse current as well as formation of dominating neutron-induced deep-level complex defect is observed at high neutron fluencies.
Permanent Link: http://hdl.handle.net/11104/0006319
Number of the records: 1